Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition
Identifieur interne : 010036 ( Main/Repository ); précédent : 010035; suivant : 010037Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition
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Abstract
We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In0.5Al0.3Ga0.2P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650 °C on In0.5Al0.3Ga0.2P layers have a high density on the order of 1010 cm-2 and the dominant size of individual quantum dots ranges from ∼5 to ∼10 nm for 7.5 monolayer equivalent growth. These InP/In0.5Al0.3Ga0.2P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In0.5Al0.3Ga0.2P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at λ∼680 nm at room temperature in optically pumped samples. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photopumped red-emitting InP/In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition</title><author><name sortKey="Ryou, J H" uniqKey="Ryou J">J. H. Ryou</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Dupuis, R D" uniqKey="Dupuis R">R. D. Dupuis</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Walter, G" uniqKey="Walter G">G. Walter</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, Illinois 60801</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Kellogg, D A" uniqKey="Kellogg D">D. A. Kellogg</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, Illinois 60801</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Holonyak, N" uniqKey="Holonyak N">N. Holonyak</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, Illinois 60801</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Mathes, D T" uniqKey="Mathes D">D. T. Mathes</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, The University of Virginia, Charlottesville, Virginia 22906</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, The University of Virginia, Charlottesville</wicri:cityArea></affiliation></author><author><name sortKey="Hull, R" uniqKey="Hull R">R. Hull</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, The University of Virginia, Charlottesville, Virginia 22906</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, The University of Virginia, Charlottesville</wicri:cityArea></affiliation></author><author><name sortKey="Reddy, C V" uniqKey="Reddy C">C. V. Reddy</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, Massachusetts 02138</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge</wicri:cityArea></affiliation></author><author><name sortKey="Narayanamurti, V" uniqKey="Narayanamurti V">V. Narayanamurti</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, Massachusetts 02138</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0260888</idno><date when="2001-06-25">2001-06-25</date><idno type="stanalyst">PASCAL 01-0260888 AIP</idno><idno type="RBID">Pascal:01-0260888</idno><idno type="wicri:Area/Main/Corpus">011085</idno><idno type="wicri:Area/Main/Repository">010036</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Atomic force microscopy</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD coatings</term><term>Optical pumping</term><term>Photoluminescence</term><term>Quantum well lasers</term><term>Semiconductor quantum dots</term><term>TEM</term><term>Waveguide lasers</term><term>self-assembly</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8535B</term><term>Etude expérimentale</term><term>Point quantique semiconducteur</term><term>Microscopie force atomique</term><term>TEM</term><term>Photoluminescence</term><term>Laser puits quantique</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium composé</term><term>Pompage optique</term><term>Laser guide onde</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650 °C on In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P layers have a high density on the order of 10<sup>10</sup> cm<sup>-2</sup> and the dominant size of individual quantum dots ranges from ∼5 to ∼10 nm for 7.5 monolayer equivalent growth. These InP/In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at λ∼680 nm at room temperature in optically pumped samples. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>26</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photopumped red-emitting InP/In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition</s1></fA08><fA11 i1="01" i2="1"><s1>RYOU (J. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>DUPUIS (R. D.)</s1></fA11><fA11 i1="03" i2="1"><s1>WALTER (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>KELLOGG (D. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>HOLONYAK (N.)</s1></fA11><fA11 i1="06" i2="1"><s1>MATHES (D. T.)</s1></fA11><fA11 i1="07" i2="1"><s1>HULL (R.)</s1></fA11><fA11 i1="08" i2="1"><s1>REDDY (C. V.)</s1></fA11><fA11 i1="09" i2="1"><s1>NARAYANAMURTI (V.)</s1></fA11><fA14 i1="01"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Center for Compound Semiconductor Microelectronics, The University of Illinois at Urbana-Champaign, Urbana, Illinois 60801</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Materials Science and Engineering, The University of Virginia, Charlottesville, Virginia 22906</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Gordon McKay Laboratory of Applied Science, Harvard University, Cambridge, Massachusetts 02138</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>4091-4093</s1></fA20><fA21><s1>2001-06-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0260888</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650 °C on In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P layers have a high density on the order of 10<sup>10</sup> cm<sup>-2</sup> and the dominant size of individual quantum dots ranges from ∼5 to ∼10 nm for 7.5 monolayer equivalent growth. These InP/In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at λ∼680 nm at room temperature in optically pumped samples. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F01</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>TEM</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>TEM</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>self-assembly</s0><s4>INC</s4></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Pompage optique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Optical pumping</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>MOCVD coatings</s0><s4>INC</s4></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Laser guide onde</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Waveguide lasers</s0></fC03><fN21><s1>176</s1></fN21><fN47 i1="01" i2="1"><s0>0125M000110</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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